Product Summary

The BSM100GD120DN2 is an IGBT module.

Parametrics

BSM100GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kΩ, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 150A when TC = 25℃; 100A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 300A when TC = 25℃; 200A when TC = 80℃; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 680W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃; (9)Thermal resistance, chip case RthJC: 0.182K/W; (10)Diode thermal resistance, chip case RthJCD: 0.36K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm.

Features

BSM100GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM100GD120DN2 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GD120DN2
BSM100GD120DN2

Infineon Technologies

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Data Sheet

0-1: $137.54
1-5: $130.67
5-10: $123.79
10-50: $120.06
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(USD)
Quantity
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Data Sheet

0-1: $44.53
1-10: $40.07
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Data Sheet

0-6: $78.93
6-10: $71.03
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Data Sheet

0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
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Data Sheet

0-1: $82.74
1-10: $74.47