(China (Mainland))
Product Summary
The FM25CL64-DG is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM25CL64-DG provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
FM25CL64-DG absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55 to + 125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD, Electrostatic Discharge Voltage: 4kV; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM25CL64-DG features: (1)Organized as 8,192 x 8 bits; (2)Unlimited Read/Write Cycles; (3)45 Year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 20 MHz Frequency ; (7)Direct Hardware Replacement for EEPROM; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (9)Sophisticated Write Protection Schem; (10)Hardware Protection; (11)Software Protection; (12)Low Power Consumption; (13)Low Voltage Operation 2.7-3.65V; (14)1 μA Standby Current.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM25CL64-DG |
Ramtron |
F-RAM 64K (8Kx8) 2.7V |
Data Sheet |
Negotiable |
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FM25CL64-DGTR |
Ramtron |
F-RAM 64K (8Kx8) 2.7V |
Data Sheet |
Negotiable |
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