Product Summary

The H30R1202 is a Reverse Conducting IGBT with monolithic body diode. It is suitable for Inductive Cooking and Soft Switching Applications.

Parametrics

H30R1202 absolute maximum ratings: (1)collector-emitter voltage, VCE: 1200V; (2)DC collector current, IC: 60A at TC=25℃; 30A at TC=100℃; (3)pulsed collector curent, tp limited by Tjmax, ICpuls: 90A; (4)turn off safe operating area: 90A; (5)diode pulsed current, tp limited by Tjmax, IFpulse: 90A; (6)diode surge non repetitive current, tp limited by Tjmax, IFSM: 50A at TC = 25℃, tp = 10ms, sine halfwave; 130A at TC = 25℃, tp ≤ 2.5μs, sine halfwave; 120A at TC = 100℃, tp ≤ 2.5μs, sine halfwave; (7)gate-emitter voltage, VGE: ±20V; transient gate-emitter voltage: ±25V; (8)power dissipation, Ptot: 390W; (9)operating junction temperature, Tj: -40 to 175℃; (10)storage temperature, Tstg: -55 to 175℃; (11)soldering temperature: 260℃.

Features

H30R1202 features: (1)Powerful monolithic Body Diode with very low forward voltage; (2)Body diode clamps negative voltages; (3)TrenchStop and Fieldstop technology for 1200 V applications; (4)offers: very tight parameter distribution; high ruggedness, temperature stable behavior; (5)NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Qualified according to JEDEC1 for target applications; (8)Pb-free lead plating; RoHS compliant; (9)Complete product spectrum and PSpice Models.

Diagrams

H30R1202 circuit